| 1. | Design of rapid thermal processing for ions implanted silicon
快速退火炉离子注入退火工艺设计 |
| 2. | The research advance and application of ion implanted polymers
离子注入高分子材料的研究动态及应用 |
| 3. | Structure and atom distribution of multi - charged cr ion implanted polymers
离子注入聚合物的微观结构和离子浓度分布 |
| 4. | Standard guide for determining sims relative sensitivity factors from ion implanted external standards
根据离子移植外标物测定sims有关敏感因素的标准指南 |
| 5. | These ions implant themselves deep down , relatively speaking , where they combine with atoms in the wafer and form a layer of silicon dioxide
相较之下，这些离子会深深植入晶圆中，它们在那里与晶圆的原子结合，并形成一层二氧化矽。 |
| 6. | According to the results of ramman and xrd spectrum , the structural and ramman characteristics of 5 1014cm - 2 dy ions implanted cdte films deposited on ceramic substrate have been studied , and the function of the thermal annealing have been discussed
采用显微喇曼谱结合xrd ,研究了5 1014cm - 2dy离子注入陶瓷基底上沉积的cdte薄膜的结构和喇曼特性,并讨论了离子注入后的退火效应。 |
| 7. | The studies on optical properties and irradiation effect of heavy ion implanted samples are very important from both theoretical and applied view points . in this work , the optical properties and defect structures in xe + - implanted ysz and ni + - implanted al2o3 were studied by using optical spectroscopy , tem , xps and trim 96 calculation . it was found that 1 ) a broad absorption band centered at 522 nm was observed in 1 1016 cm - 2 xe + - implanted ysz
离子注入是一种重要的表面改性技术， ysz ( yttria - stabilizedcubiczirconia )和- al _ 2o _ 3是两种性能优良的陶瓷，前者是目前发现的最抗辐照的绝缘体，而后者则是抗辐照最差的绝缘体材料之一，研究重离子注入对其光学性能的影响并以此研究辐照效应，有重要的理论意义和应用价值。 |
| 8. | Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ) . for potential applications as artificial joint materials and artificial cardiac valve materials , its trobological performance and hemocompatibility has also been evaluated in the present ph . d . thesis
本研究采用等离子源离子注入?离子束增强沉积技术( psii - ibed )制备了钛合金基类金刚石梯度薄膜材料，对类金刚石梯度薄膜这一新型人工关节材料和人工心脏瓣膜材料的生物摩擦学性能和血液相容性进行了研究和评价，研究了摩擦磨损对材料血液相容性的影响。 |
| 9. | During the high - voltage device design , the thick epitaxial layer ldmos which is compatible with current technology was researched . this device used piecewise vld and multiple region structure f reduce field layer . the using of the f reduce field layer effectively reduce the surface electric field of the device , shorten the length of its drift region , enlarge the choice of range of the ion implant dose of the p layer , and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss
在高压器件研究中对与现有工艺相兼容厚外延ldmos进行研究，该结构采用分段变掺杂多区p ~ -降场层，有效降低器件的表面电场，缩短器件的漂移区长度，增大p ~ -降场层注入剂量的选择范围，并有效地抑制界面电荷qss对器件耐压的不利影响。 |
| 10. | Simox soi wafers produced by ion implant processes were used in this experiment . the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures . the soi transistors have been the key devices for achieving the low voltage operation and low power consumption , because of the small junction capacitance , the small s - factor , and the small substrate bias effect
这三种模型分别是：第一，将传统的mos电容结构应用到soi材料上来进行c - v ， i - v测试，分析计算soi材料的重要电学性能参数；第二种，针对soi材料的特殊结构，为了适应生产线上对无损soi园片进行电学性能测试的要求，应用mosos结构来对soi材料进行电学性能表征。 |
